New Product
SUD17N25-165
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ a
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V (BR)DSS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
250
2.5
4.0
± 100
V
nA
V DS = 250 V, V GS = 0 V
1
Zero Gate Voltage Drain Current
I DSS
V DS = 250 V, V GS = 0 V, T J = 125 °C
50
μA
V DS = 250 V, V GS = 0 V, T J = 175 °C
250
On-State Drain Current
b
I D(on)
V DS = 15 V, V GS = 10 V
V GS = 10 V, I D = 14 A
17
0.131
0.165
A
Drain-Source On-State Resistance b
r DS(on)
V GS = 10 V, I D = 14 A, T J = 125 °C
0.347
Ω
V GS = 10 V, I D = 14 A, T J = 175 °C
0.462
Forward Transconductance b
g fs
V DS = 15 V, I D = 17 A
36
S
Dynamic a
Input Capacitance
C iss
1950
Gate-Source Charge
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge c
c
Gate-Drain Charge c
Gate Resistance
C oss
C rss
Q g
Q gs
Q gd
R g
V GS = 0 V, V DS = 25 V, f = 1 MHz
V DS = 125 V, V GS = 10 V, I D = 17 A
160
70
30
10
10
1.6
42
pF
nC
Ω
Turn-On Delay
Time c
t d(on)
15
25
Rise Time c
Turn-Off Delay Time c
Fall Time c
t r
t d(off)
t f
V DD = 125 V, R L = 7.35 Ω
I D ? 17 A, V GEN = 10 V, R g = 2.5 Ω
130
30
100
195
45
150
ns
Source-Drain Diode Ratings and Characteristics (T C = 25 °C)
Pulsed Current
I SM
20
A
Diode Forward Voltage
b
V SD
I F = 17 A, V GS = 0 V
0.9
1.5
V
Source-Drain Reverse Recovery Time
t rr
I F = 17 A, di/dt = 100 A/μs
115
175
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72851
S-71660-Rev. B, 06-Aug-07
相关PDF资料
SUD19N20-90-T4-E3 MOSFET N-CH D-S 200V TO252
SUD19P06-60L-E3 MOSFET P-CH D-S 60V TO252
SUD23N06-31-T4-GE3 MOSFET N-CH D-S 60V TO252
SUD23N06-31L-E3 MOSFET N-CH D-S 60V TO252
SUD25N15-52-T4-E3 MOSFET N-CH D-S 150V TO252
SUD35N05-26L-E3 MOSFET N-CH D-S 55V TO252
SUD40N02-08-E3 MOSFET N-CH D-S 20V TO252
SUD50N02-09P-E3 MOSFET N-CH D-S 20V DPAK
相关代理商/技术参数
SUD19N20-90 功能描述:MOSFET 200V 17.5A 100W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD19N20-90_08 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) 175 °C MOSFET
SUD19N20-90-E3 功能描述:MOSFET 200V 17.5A 100W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD19N20-90-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SUD19N20-90T1-E3 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 200V 19A 3PIN TO-252 - Tape and Reel
SUD19N20-90-T4 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 200V 19A 3-Pin(2+Tab) DPAK T/R
SUD19N20-90-T4-E3 功能描述:MOSFET N-CH 200V 19A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUD19P06-60 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 60-V (D-S) MOSFET